bys11-90 vishay general semiconductor document number: 86014 revision: 21-jan-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 surface mount schottky barrier rectifier features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? very low switching losses ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency inverters, switching power supplies, freewheeling diod es, oring diode, dc-to-dc converters and reverse battery protection. mechanical data case: do-214ac (sma) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 1.5 a v rrm 90 v i fsm 40 a v f 0.75 v t j max. 150 c do-214ac (sma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol bys11-90 unit device marking code bys 109 maximum repetitive peak reverse voltage v rrm 90 v maximum average forward rectified current i f(av) 1.5 a peak forward surge current single half sine-wave superimposed on rated load 8.3 ms 10 ms i fsm 40 30 a voltage rate of change (rated v r ) dv/dt 10 000 v/s junction and storage temperature range t j , t stg - 55 to + 150 c
bys11-90 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 86014 revision: 21-jan-08 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle notes: (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol bys11-90 unit maximum instantaneous forward voltage (1) 1.0 a v f 750 mv maximum dc reverse current (1) v rrm t j = 25 c t j = 100 c i r 100 1 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol bys11-90 unit maximum thermal resistance - junction lead r jl 25 c/w maximum thermal resistance - junction ambient r ja 150 (1) 125 (2) 100 (3) c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode bys11-90-e3/tr 0.064 tr 1800 7" diameter plastic tape and reel bys11-90-e3/tr3 0.064 tr3 7500 13" diameter plastic tape and reel bys11-90he3/tr (1) 0.064 tr 1800 7" diameter plastic tape and reel bys11-90he3/tr3 (1) 0.064 tr3 7500 13" diameter plastic tape and reel figure 1. forward current vs. forward voltage 10 1 0.1 0.01 0.001 t j = 150 c t j = 25 c 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 for w ard v oltage ( v ) for w ard c u rrent (a) figure 2. max. average forward current vs. ambient temperature 040 8 0 120 160 200 2.0 1.6 1.2 0. 8 0.4 0 v r = v rrm , half sine- w a v e, r thja = 25 k/ w am b ient temperat u re (c) a v erage for w ard c u rrent (a)
bys11-90 vishay general semiconductor document number: 86014 revision: 21-jan-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. max. average forward currentvs. ambient temperature figure 4. reverse current vs. junction temperature v r = 0 v , half sine- w a v e r thja = 25 k/ w 100 k/ w 125 k/ w 150 k/ w 040 8 0 120 160 200 2.0 1.6 1.2 0. 8 0.4 0 am b ient temperat u re (c) a v erage for w ard c u rrent (a) v r = v rrm 040 8 0 120 160 200 1000 100 10 1 0.1 j u nction temperat u re (c) re v erse c u rrent (ma) figure 5. max reverse power dissi pation vs. junction temperature figure 6. diode capacitance vs. reverse voltage r thja = 25 k/ w 100 k/ w v r = v rrm 040 8 0 120 100 200 2.0 1.6 1.2 0. 8 0.4 0 max. re v erse po w er dissipation ( w ) j u nction temperat u re (c) f = 1 mhz 0.1 1 10 100 re v erse v oltage ( v ) 1 8 0 160 140 120 100 8 0 60 40 20 0 diode capacitance (pf) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) mountin g pad layout 0.074 (1. 88 ) max. 0.20 8 (5.2 8 ) ref. 0.066 (1.6 8 ) mi n . 0.060 (1.52) mi n .
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